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The Effect of Random and Block Copolymerization with Pendent Carbozole Donors and Naphthalimide Acceptors on Multilevel Memory Performance
Author(s) -
Zhang Qijian,
Zhou Jiahui,
Li Hui,
He Jinghui,
Li Najun,
Xu Qingfeng,
Chen Dongyun,
Li Hua,
Lu Jianmei
Publication year - 2018
Publication title -
chemistry – an asian journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.18
H-Index - 106
eISSN - 1861-471X
pISSN - 1861-4728
DOI - 10.1002/asia.201701778
Subject(s) - copolymer , materials science , stacking , polymer , ternary operation , fabrication , polymerization , block (permutation group theory) , thermal conduction , polymer chemistry , nanotechnology , optoelectronics , computer science , chemistry , organic chemistry , mathematics , medicine , alternative medicine , geometry , pathology , composite material , programming language
Polymeric materials have been widely used in the fabrication of data‐storage devices, owing to their unique advantages and defined conduction mechanisms. To date, the most‐functional polymers that have been reported for memory devices were synthesized through random copolymerization, whilst there have been no reports regarding the memory effect of block polymers. Herein, we synthesized a random copolymer (PMCz 8 ‐ co ‐PMBNa 2 ) and its corresponding block copolymer (PMCz 8 ‐ b ‐PMBNa 2 ) to study the effect of the method of polymerization on the memory properties of the corresponding devices. Interestingly, both devices (ITO/PMCz 8 ‐ co ‐PMBNa 2 /Al and ITO/PMCz 8 ‐ b ‐PMBNa 2 /Al) exhibited ternary memory performance, with threshold voltages of −1.7 V/−3.3 V and −2.7 V/−3.8 V, respectively. However, based on comprehensive measurements, the memory properties of PMCz 8 ‐ co ‐PMBNa 2 and PMCz 8 ‐ b ‐PMBNa 2 were found to be owing to the operation of different conduction mechanisms, which resulted from different molecular stacking in the film state. Therefore, we expect that this work will be helpful for improving our understanding of the conduction mechanisms in polymer‐based data‐storage devices.