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High Performance Nonvolatile Transistor Memories Utilizing Functional Polyimide‐Based Supramolecular Electrets
Author(s) -
Tung WeiYao,
Li MengHsien,
Wu HungChin,
Liu HsinYu,
Hsieh YunTing,
Chen WenChang
Publication year - 2016
Publication title -
chemistry – an asian journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.18
H-Index - 106
eISSN - 1861-471X
pISSN - 1861-4728
DOI - 10.1002/asia.201600365
Subject(s) - electret , organic field effect transistor , materials science , polyimide , supramolecular chemistry , transistor , pentacene , optoelectronics , non volatile memory , threshold voltage , nanotechnology , field effect transistor , voltage , thin film transistor , molecule , chemistry , organic chemistry , layer (electronics) , electrical engineering , composite material , engineering
We report pentacene‐based organic field‐effect transistor memory devices utilizing supramolecular electrets, consisting of a polyimide, PI(6FOH‐ODPA), containing hydroxyl groups for hydrogen bonding with amine functionalized aromatic rings (AM) of 1‐aniline (AM1), 2‐naphthylamine (AM2), 2‐aminoanthracene (AM3), and 1‐aminopyrene (AM4). The effect of the phenyl ring size and composition of AM1–AM4 on the hole‐trapping capability of the fabricated devices was investigated systematically. Under an operating voltage under ±40 V, the prepared devices using the electrets of 100 % AM1–AM4/PI ratios exhibited a memory window of 0, 8.59, 25.97, and 29.95 V, respectively, suggesting that the hole‐trapping capability increased with enhancing phenyl ring size. The memory window was enhanced as the amount of AM in PI increased. Furthermore, the devices showed a long charge‐retention time of 10 4 s with an ON/OFF current ratio of around 10 3 –10 4 and multiple switching stability over 100 cycles. This study demonstrated that the electrical characteristics of the OFET memory devices could be manipulated through the chemical compositions of the supramolecular electrets.