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Adjusting the Proportion of Electron‐Withdrawing Groups in a Graft Functional Polymer for Multilevel Memory Performance
Author(s) -
Wu Linxin,
Wang Peng,
Zhang Chunyu,
He Jinghui,
Chen Dongyun,
Jun Jiang,
Xu Qingfeng,
Lu Jianmei
Publication year - 2016
Publication title -
chemistry – an asian journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.18
H-Index - 106
eISSN - 1861-471X
pISSN - 1861-4728
DOI - 10.1002/asia.201500842
Subject(s) - x ray photoelectron spectroscopy , moiety , polymer , polymer chemistry , aldehyde , materials science , delocalized electron , acceptor , atom transfer radical polymerization , nucleophile , ternary operation , nitro , photochemistry , polymerization , chemistry , organic chemistry , chemical engineering , composite material , catalysis , physics , alkyl , engineering , condensed matter physics , computer science , programming language
A polymer containing aldehyde active groups (PVB) was synthesized by atom transfer radical polymerization (ATRP), acting as a polymer precursor to graft a functional moiety via nucleophilic addition reaction. DHI (2‐(1,5‐dimethyl‐hexyl)‐6‐hydrazino‐benzo[de]isoquinoline‐1,3‐dione) and NPH (nitrophenyl hydrazine) groups, which contain naphthalimides that act as narrow traps and nitro groups that act as deep traps, were anchored onto the PVB at different ratios. A series of graft polymers were obtained and named PVB‐DHI, PVB‐DHI 4 ‐NPH, PVB‐DHI‐NPH 4 , and PVB‐NPH. The chemical composition of the polymers was analyzed by 1 H‐NMR spectroscopy and X‐ray photoelectron spectroscopy (XPS). Memory devices were prepared from the polymers, and I – V characteristics were measured to determine the performance. By adjusting the ratio of different electron acceptors (DHI and NPH) to 4:1, ternary memory behavior was achieved. The relationship between memory behavior of PVB‐DHI x NPH y and acceptor groups as well as their conduction mechanism were studied in detail.

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