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Growth Mechanism of Graphene on Graphene Films Grown by Chemical Vapor Deposition
Author(s) -
Kang Cheong,
Jung Da Hee,
Lee Jin Seok
Publication year - 2015
Publication title -
chemistry – an asian journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.18
H-Index - 106
eISSN - 1861-471X
pISSN - 1861-4728
DOI - 10.1002/asia.201403395
Subject(s) - graphene , materials science , bilayer graphene , chemical vapor deposition , foil method , graphene foam , graphene nanoribbons , graphene oxide paper , nanotechnology , substrate (aquarium) , growth rate , monolayer , chemical engineering , chemical physics , composite material , chemistry , oceanography , geometry , mathematics , geology , engineering
Abstract We report an approach for the synthesis of mono‐ or bilayer graphene films by atmospheric‐pressure chemical vapor deposition that can achieve a low defect density through control over the growth time. Different heating ramp rates were found to lead to variation in the smoothness and grain size of the Cu foil substrate, which directly influenced the density of the graphene domains. The rough Cu surface induced by rapid heating creates a high density of graphene domains in the initial stage, ultimately resulting in a graphene film with a high defect density due to an increased overlap between domains. Conversely, a slow heating rate resulted in a smooth and flat Cu surface, thereby lowering the density of the initial graphene domains and ensuring a uniform monolayer film. From this, we demonstrate that the growth mechanism of graphene on existing graphene films is dependent on the density of the initial graphene domains, which is affected by the heating ramp rate.