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Synthesis of Imidazole Derivatives and Study of the ON‐Based Different Memory Performances
Author(s) -
Liu Haifeng,
Zhuang Hao,
Li Hua,
Lu Jianmei
Publication year - 2014
Publication title -
chemistry – an asian journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.18
H-Index - 106
eISSN - 1861-471X
pISSN - 1861-4728
DOI - 10.1002/asia.201301666
Subject(s) - static random access memory , electrode , materials science , imidazole , non volatile memory , layer (electronics) , optoelectronics , buffer (optical fiber) , molecule , nanotechnology , chemistry , computer science , stereochemistry , organic chemistry , computer hardware , telecommunications
We report the synthesis of two imidazole‐based small molecules with different planarity of terminal aromatic rings and their application in memory devices with a sandwich configuration. The optical, electric, and the on‐based device performances were systematically investigated. Surprisingly, the device based on BT‐PMZ exhibited volatile static random access memory (SRAM) behavior, whereas that based on BT‐BMZ showed nonvolatile write‐once‐read‐many‐times (WORM) behavior. Further studies on the film morphology and the molecular electronic structure were carried out to investigate the underlying mechanism for the large difference in their performance. Moreover, the performance of the device that incorporates a LiF buffer layer (5 nm) embedded at the interface between the BT‐BMZ active layer and the Al top electrode as well as that of the device with a cold‐deposited top electrode of mercury droplet was further investigated. At that point a dramatic change in memory performance of the devices from the WORM to SRAM type was observed. The intrinsic volatile SRAM performance for the two molecules results from the moderate electron‐withdrawing strength of the acceptor moieties and thus weak trapping of the charge carriers.