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Synthesis, Characterization, and Non‐Volatile Memory Device Application of an N‐Substituted Heteroacene
Author(s) -
Wang Chengyuan,
Wang Jiangxin,
Li PeiZhou,
Gao Junkuo,
Tan Si Yu,
Xiong WeiWei,
Hu Benlin,
Lee Pooi See,
Zhao Yanli,
Zhang Qichun
Publication year - 2014
Publication title -
chemistry – an asian journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.18
H-Index - 106
eISSN - 1861-471X
pISSN - 1861-4728
DOI - 10.1002/asia.201301547
Subject(s) - phenazine , materials science , characterization (materials science) , resistive random access memory , character (mathematics) , non volatile memory , resistive touchscreen , optoelectronics , chemistry , nanotechnology , computer science , organic chemistry , electrode , mathematics , computer vision , geometry
N‐substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them have been investigated in organic resistive memory devices. Here, a novel N‐substituted heteroacene 2‐(4′‐(diphenylamino)phenyl)‐4,11‐bis((triisopropylsilyl)ethynyl)‐1H‐imidazo[4,5‐b]phenazine ( DBIP ) has been designed, synthesized, and characterized. Sandwich‐structure memory devices based on DBIP have been fabricated and the devices show non‐volatile and stable memory character with good endurance performance.