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Nanowire Transistor‐Based Ultrasensitive Virus Detection with Reversible Surface Functionalization
Author(s) -
Chiang PeiLing,
Chou TzuChi,
Wu TzuHeng,
Li ChangChi,
Liao ChunDa,
Lin JengYu,
Tsai MingHsueh,
Tsai ChiaChang,
Sun ChihJung,
Wang ChingHo,
Fang JimMin,
Chen YitTsong
Publication year - 2012
Publication title -
chemistry – an asian journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.18
H-Index - 106
eISSN - 1861-471X
pISSN - 1861-4728
DOI - 10.1002/asia.201200222
Subject(s) - surface modification , materials science , biosensor , nanotechnology , nanowire , field effect transistor , transistor , chemical engineering , physics , quantum mechanics , voltage , engineering
We have applied a reusable silicon nanowire field‐effect transistor (SiNW‐FET) as a biosensor to conduct ultrasensitive detection of H5N2 avian influenza virus (AIV) in very dilute solution. The reversible surface functionalization of SiNW‐FET was made possible using a disulfide linker. In the surface functionalization, 3‐mercaptopropyltrimethoxysilane (MPTMS) was first modified on the SiNW‐FET (referred to as MPTMS/SiNW‐FET), with subsequent dithiothreitol washing to reduce any possible disulfide bonding between the thiol groups of MPTMS. Subsequently, receptor molecules could be immobilized on the MPTMS/SiNW‐FET by the formation of a disulfide bond. The success of the reversible surface functionalization was verified with fluorescence examination and electrical measurements. A surface topograph of the SiNW‐FET biosensor modified with a monoclonal antibody against H5N2 virus (referred to as mAb H5 /SiNW‐FET) after detecting approximately 10 −17 M H5N2 AIVs was scanned by atomic force microscopy to demonstrate that the SiNW‐FET is capable of detecting very few H5N2 AIV particles.