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Solution‐Processable n‐Type Organic Field‐Effect Transistor (OFET) Materials Based on Carbonyl‐Bridged Bithiazole and Dioxocyclopentene‐Annelated Thiophenes
Author(s) -
Nitani Masashi,
Ie Yutaka,
Tada Hirokazu,
Aso Yoshio
Publication year - 2011
Publication title -
chemistry – an asian journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.18
H-Index - 106
eISSN - 1861-471X
pISSN - 1861-4728
DOI - 10.1002/asia.201100098
Subject(s) - organic field effect transistor , thiophene , cyclic voltammetry , alkyl , ferrocene , field effect transistor , materials science , organic semiconductor , electrochemistry , homo/lumo , electron mobility , amorphous solid , molecule , transistor , chemistry , organic chemistry , optoelectronics , voltage , electrode , physics , quantum mechanics
A series of electronegative π‐conjugated compounds composed of carbonyl‐bridged bithiazole and alkyl‐substituted dioxocyclopenta[ b ]thiophene were synthesized as a candidate for solution‐processable n‐type organic semiconductor materials and characterized on the basis of photophysical and electrochemical properties. Cyclic voltammetry measurements showed that the first half‐wave reduction potentials of these compounds are between −0.97 and −1.14 V versus ferrocene/ferrocenium, which corresponds to lowest unoccupied molecular orbital energy levels between −3.83 and −3.66 eV. Thanks to hexyl or dodecyl groups in the molecules, the compounds are sufficiently soluble to realize the fabrication of their thin films through a spin‐coating method. As a result, the prepared organic field‐effect transistors based on these newly developed compounds exhibited n‐channel characteristics not only under vacuum but also in air, and the best field‐effect electron mobility observed under vacuum was 0.011 cm 2 V −1 s −1 with an on/off ratio of 10 8 and a threshold voltage of 16 V.