Premium
Ionic liquid gated poly(triaryl amine) thin film field effect transistor
Author(s) -
Rijos Luis M.,
Figueroa Kelotchi S.,
Porcu Angelo,
Rivera Naomi M.,
Meléndez Anamaris,
Ramos Idalia,
Pinto Nicholas J.
Publication year - 2021
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.50361
Subject(s) - materials science , transistor , amine gas treating , thin film transistor , ionic liquid , field effect transistor , threshold voltage , optoelectronics , polymer , ionic bonding , polyaniline , chemical engineering , analytical chemistry (journal) , voltage , polymer chemistry , nanotechnology , organic chemistry , chemistry , electrical engineering , ion , catalysis , composite material , layer (electronics) , polymerization , engineering
Abstract A poly(triaryl amine) thin film field effect transistor was investigated in air with ionic liquid (IL) gating for the first time. The transistor retained a high‐on/off ratio of ~700 and mobility of ~10 −2 cm 2 /V‐s. When compared to a transistor based on the conducting polymer polyaniline under similar operating conditions, it was found to exhibit superior performance. Significantly low‐operating voltages (±1 V) enhances the possibility of its use in organic electronics. The device was successfully tested for binary operation, and we demonstrate its suitability for use in low‐power consumption electronic circuits.