Electrical properties of nitric acid and DMSO treated PEDOT:PSS/n‐Si hybrid heterostructures for optoelectronic applications

Organic/inorganic heterostructures are an emerging and interesting field of research for optoelectronics. In this work, an efficient organic/inorganic hybrid heterojunction between PEDOT:PSS and n‐type Silicon has been fabricated for optoelectronic applications. Samples with varying thickness of PEDOT:PSS were prepared by spin coating technique and the electrical conductivity of organic layers was modified using DMSO as additive. Post fabrication, the hybrid heterostructures were treated with HNO 3 vapor so as to enhance the conductivity of the organic layer. Surface treatment with HNO 3 was found to lower the roughness of the organic layer and enhance the transparency of the layer. I – V characteristics reveal optimized behavior of HNO 3 treated PEDOT:PSS layer with a low Ideality factor ( n ~3.2) and a barrier height (Φ B ) of 0.8 eV. The findings of the study provide a promising efficient method to enhance the electrical and device properties of PEDOT:PSS/n‐Si heterostructures for optoelectronic applications. © 2020 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2020 , 137 , 48952.