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High‐ T g porous polyimide films with low dielectric constant derived from spiro‐(adamantane‐2,9′(2′,7′‐diamino)‐fluorene)
Author(s) -
Lv Pengxia,
Dong Zhixin,
Dai Xuemin,
Qiu Xuepeng
Publication year - 2019
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.47313
Subject(s) - polyimide , materials science , dielectric , porosity , thermal decomposition , microelectronics , ethylene glycol , polymer chemistry , glass transition , adamantane , composite material , chemical engineering , polymer , nanotechnology , organic chemistry , chemistry , optoelectronics , layer (electronics) , engineering
Porous polyimide (PI) films with low dielectric constants and excellent thermal properties have been a pressing demand for the next generation of high‐performance, miniature, and ultrathin microelectronic devices. A series of novel porous PI films containing fluorenyl‐adamantane groups were prepared successfully via thermolysis of poly(ethylene glycol) (PEG) added in the PI matrix. The cross‐sectional morphologies of porous PI films showed closed pores with diameters ranging from 135 to 158 nm, which were uniform and regular in shape without interconnectivity. These porous PI films exhibited excellent thermal properties with a glass‐transition temperature at 376 °C whereas the 5% weight loss temperature in air excess of 405 °C due to enhanced rigidity afforded by fluorenyl‐adamantane groups. Accompanied by thermolysis content of PEG increasing from 0 to 20 wt %, the density of porous PI films decreased, and the corresponding porosity grew significantly from 0 to 11.48%. Depending on porosity, the dielectric constant and dielectric loss of porous PI films significantly declined from 2.89 to 2.37 and from 0.050 to 0.021, respectively. These excellent properties benefit the as‐prepared porous PI films for application as interlayer dielectrics, integrated circuit chips, or multichip modules in microelectronic fields. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019 , 136 , 47313.