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Dielectric properties of graphene–iron oxide/polyimide films with oriented graphene
Author(s) -
Ding Ling,
Liu Leipeng,
Li Penggang,
Lv Fengzhu,
Tong Wangshu,
Zhang Yihe
Publication year - 2016
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.43041
Subject(s) - materials science , polyimide , dielectric , graphene , nanocomposite , dielectric loss , percolation threshold , composite material , oxide , percolation (cognitive psychology) , kapton , electrical resistivity and conductivity , nanotechnology , optoelectronics , electrical engineering , layer (electronics) , engineering , neuroscience , metallurgy , biology
The preparation of high‐dielectric‐constant ( k ) materials is important in the field of electronics. However, how to effectively use the function of fillers to enhance k is still a challenge. In this study, anisotropic graphene (GNS)–iron oxide (Fe 3 O 4 )/polyimide (PI) nanocomposite films with oriented GNSs were prepared by the in situ polymerization of 4,4′‐oxydianiline and pyromellitic anhydride in the presence of GNS–Fe 3 O 4 . Films of the precursors were fabricated, and this was followed by stepwise imidization under a magnetic field at a higher temperature to orient the magnetic sheets. The orientation of GNS–Fe 3 O 4 and the relationships of the GNS–Fe 3 O 4 content and measurement frequency with the dielectric properties of the GNS–Fe 3 O 4 /PI films were studied in detail. The dielectric property differences of the GNS–Fe 3 O 4 /PIs with GNS–Fe 3 O 4 parallel or perpendicular to the film surface were not obvious, when the content of GNS–Fe 3 O 4 was lower than 5 wt %. However, at the percolation threshold, the k values of GNS–Fe 3 O 4 /PI films with horizontal GNS–Fe 3 O 4 were much higher than those of the other two kinds of films at 10 3 Hz; this was derived from the contribution of more effective microcapcitors parallel to the film surface. So, making the GNS–Fe 3 O 4 parallel to the film surface greatly enhanced k of GNS–Fe 3 O 4 . However, switching the charges on the large lateral surface of the parallel GNSs with the electric field also caused a higher dielectric loss and the frequency dependence of k and the dielectric loss at low frequency. © 2015 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2016 , 133 , 43041.