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POSS‐based molecular hybrids with low dielectric constant: Effect of chemical structure and molecular architecture
Author(s) -
Ke Fuyou,
Zhang Chao,
Guang Shanyi,
Xu Hongyao,
Lin Naibo
Publication year - 2015
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.42292
Subject(s) - silsesquioxane , dielectric , materials science , fourier transform infrared spectroscopy , chemical structure , monomer , polymer chemistry , molecule , thermal stability , amide , chemical engineering , organic chemistry , chemistry , polymer , composite material , optoelectronics , engineering
Three kinds of hybrids with different architectures including dumbbell‐type, bead‐type, and cross‐linked structure, were prepared via the Heck reaction between octavinyl‐polyhedral oligomeric silsesquioxane (OV‐POSS) and different bromo‐substituted aromatic amide monomers. The molecular architecture can be successfully achieved by simply varying the feed ratio of OV‐POSS to monomers. Their structure and properties were characterized by FTIR, 1 H NMR, 29 Si NMR, provide the expansion for FTIR and NMR] All the POSS‐based hybrids exhibited good thermal stability and low dielectric constant properties. The relationship between chemical structure, molecular architecture, and the dielectric constant of these hybrids were investigated in detail. The results show that POSS content dominated the low dielectric constant of the hybrids, while the chemical structure of organic chains and molecular architecture also play an important role on the formation of low dielectric constant. © 2015 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132 , 42292.