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Atomic oxygen erosion resistance of titania–polyimide hybrid films derived from titanium tetrabutoxide and polyamic acid
Author(s) -
Xiao Fei,
Wang Kai,
Zhan Maosheng
Publication year - 2011
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.34467
Subject(s) - polyimide , materials science , x ray photoelectron spectroscopy , ultimate tensile strength , scanning electron microscope , titanium , fourier transform infrared spectroscopy , elongation , chemical engineering , glass transition , sol gel , polymer chemistry , analytical chemistry (journal) , layer (electronics) , composite material , polymer , nanotechnology , organic chemistry , chemistry , metallurgy , engineering
A series of polyimide/titania (PI/TiO 2 ) hybrid films have been successfully synthesized based on titanium tetrabutoxide (Ti(OEt) 4 ), 3,3′,4,4′‐bezonphenone tetracarboxylic dianhydride (BTDA), 4,4′‐oxydianiline (ODA), and 1,3‐bis(aminopropyl) tetramethyldisiloxane (APrTMOS) by a sol–gel process. The atomic oxygen (AO) exposure tests were carried out using a ground‐based AO effects simulation facility. The chemical structure of PI/TiO 2 films was characterized by Fourier transform‐infrared (FT‐IR) spectroscope before and after AO exposure. The glass transition temperature ( T g ) and mechanical properties were examined by dynamic mechanical analysis (DMA) and universal mechanical testing machine, respectively. The tensile strength and elongation of the hybrid film decreased with the increase of TiO 2 content, whereas the T g increased with the increase of TiO 2 content. The effects of TiO 2 content on the morphology and structure evolvement of PI/TiO 2 hybrid films were also investigated using field emission scanning electron microscopy (FE‐SEM) and X‐ray photoelectron spectroscope (XPS), respectively. The results indicated that a TiO 2 ‐rich layer resulting from the Ti(OEt) 4 formed on the PI film after AO exposure, which decreased the mass loss rate and obviously improved the AO resistance of PI films. © 2011 Wiley Periodicals, Inc. J Appl Polym Sci, 2011