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Novel dielectric behaviors in PVDF‐based semiconductor composites
Author(s) -
Xu HaiPing,
Xie HuaQing,
Yang DanDan,
Wu YiHua,
Wang JingRong
Publication year - 2011
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.34362
Subject(s) - materials science , composite material , dielectric , percolation threshold , polyvinylidene fluoride , carbon black , composite number , percolation (cognitive psychology) , filler (materials) , dielectric loss , high κ dielectric , permittivity , electrical resistivity and conductivity , polymer , natural rubber , optoelectronics , neuroscience , electrical engineering , biology , engineering
Composites of polyvinylidene fluoride (PVDF) filled with different conductive fillers as carbon black (CB), nickel (Ni), zinc (Zn), and tungsten (W), respectively, were prepared at same processing condition. The temperature dependence of dielectric behaviors of composites was studied at wide filler concentration and wide frequency ranges. Results show that there are giant dielectric constants as the concentration of filler is near the percolation threshold. The dielectric constants of all studied composites decrease slowly with increasing of frequency and rise gradually with increasing filler contents in the composites. Two relaxation peak regions of dielectric constant are observed from −30 to 40°C and from 100 to 150°C, which can be attributed to the contribution of polar effect of PVDF. The CB filled PVDF (CB/PVDF) composites present a lower percolation threshold than other metallic‐filler filled PVDF composites. The maximal dielectric constant was found in the Ni filled PVDF (Ni/PVDF) composite. © 2011 Wiley Periodicals, Inc. J Appl Polym Sci, 2011