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Effect of weak reductant on properties of electroless copper polyacrylonitrile nanocomposites for electromagnetic interference shielding
Author(s) -
Tsao KengYu,
Chen ChangCheng,
Huang ChiYuan,
Tsai ChingShan,
Yang SungYeng,
Yeh JenTaut,
Chen KanNan
Publication year - 2010
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.32467
Subject(s) - polyacrylonitrile , copper , copper sulfide , materials science , electromagnetic shielding , composite number , electrical resistivity and conductivity , nanocomposite , sulfide , chemical engineering , inorganic chemistry , composite material , chemistry , metallurgy , polymer , electrical engineering , engineering
Abstract In this work, the electroless copper method with different reductant compositions (NaHSO 3 /Na 2 S 2 O 3 ·5H 2 O and Na 2 S 2 O 3 ·5H 2 O) without sensitizing and activating, was used to deposit copper‐sulfide deposition on the polyacrylonitrile (PAN) surface for electromagnetic interference (EMI) shielding materials. The weak reductant, NaHSO 3 , in the electroless copper method was used to control the phase of copper‐sulfide deposition. The Cu x ( x =1–1.8) S was deposited on the PAN (Cu x S‐PAN) by reductant composition (NaHSO 3 /Na 2 S 2 O 3 ·5H 2 O) and the Cu x ( x =1–1.8) S deposition of Cu x S‐PAN possesses three kinds of copper‐sulfide phases (CuS, Cu 1.75 S and Cu 1.8 S). However, the electroless copper with reductant was only Na 2 S 2 O 3 ·5H 2 O (without weak reductant, NaHSO 3 ), the hexagonal CuS deposition was plated on the PAN (CuS‐PAN) and increased the EMI shielding effectiveness of CuS‐PAN composites about 10–15 dB. In this study, the best EMI SE of CuS‐PAN and Cu x S‐PAN composites were about 27–30 dB and 15–17 dB respectively, as the cupric ion concentration was 0.24 M . The volume resistivity of CuS‐PAN composite was about 1000 times lower than that of Cu x S‐PAN composite and lowest volume resistivity of CuS‐PAN composites was 0.012 Ω cm, as the cupric ion concentration was 0.24 M . © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2010