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Properties of epoxy novolak resin layers doped with bismuth for photoluminescence near 1300 nm
Author(s) -
Prajzler Václav,
Lyutakov Oleksiy,
Hüttel Ivan,
Špirková Jarmila,
Oswald Jiří,
Machovič Vladimír,
Jeřábek Vítězslav
Publication year - 2010
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.32039
Subject(s) - bismuth , materials science , photoluminescence , doping , dopant , epoxy , analytical chemistry (journal) , luminescence , band gap , spin coating , absorption (acoustics) , photonics , coating , optoelectronics , composite material , chemistry , organic chemistry , metallurgy
In this article, we report on the optical properties of bismuth ions doped epoxy novolak resin (ENR). The polymer layers containing 1–20 at. % of bismuth were fabricated by spin coating onto silicon or quartz substrates. The properties of the material were studied using several methods with special regards to its potential utilization in photonics devices. Absorption spectra were taken in the range from 350 to 800 nm. Optical band gap E g was determined from the absorption coefficient values using Tauc's procedure, i.e., from the relationship αhv = A ( hv − E g ) 2 and the obtained values varied from 2.94 to 3.23 eV depending on the amount of bismuth ions involved in the samples. Photoluminescence spectra around 1300 nm were recorded by using excitation of semiconductor lasers operating at 808 nm ( E x = 500 mW). Optical properties of bismuth‐doped ENR were evaluated on the bases of the concentration of the bismuth ions involved in the samples and showed, e.g., close relations between concentration of the dopants and intensity of the luminescence band at 1300 nm. IR spectra showed only negligible changes in the original substrate resin. Our results proved that the bismuth‐doped ENR have a potential for utilization in photonic devices. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2010