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Study of the synthesis and characterization of methacrylate photoresists
Author(s) -
Fu S. C.,
Lin H. W.,
Chou W. Y.,
Wang L. A.,
Hsieh K. H.
Publication year - 2001
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.2313
Subject(s) - resist , methacrylate , materials science , lithography , copolymer , photoresist , polymer chemistry , fourier transform infrared spectroscopy , chemical engineering , excimer laser , layer (electronics) , nanotechnology , laser , polymer , composite material , optics , optoelectronics , engineering , physics
Polymethacrylate copolymers used as single‐layer resists (SLR) were investigated in this study. A photoacid generator (PAG) in the chemically amplified resist (CAR) can generate a Brönsted proton after light stimulation, which can catalyze the deprotection reaction of t ‐butyl methacrylate during the postexposure baking (PEB) process. Excimer lasers (KrF and ArF) were used as light source to evaluate the lithographic performance of resists. The hydrophobic property of the resist changed to hydrophilic property after the deprotection reaction by light exposure, which made the exposed resist soluble in the base developer. The deprotection reaction was analyzed by using FTIR and the reaction kinetics of the resist is discussed. The effects of the t ‐butyl methacrylate and the isobornyl methacrylate in the resists on the light sensitivity, contrast, reactive ion etching (RIE) resistance, and lithographic performance were systematically investigated. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 83: 1860–1869, 2002