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Preparation and characterization of negative photosensitive polysiloxaneimide
Author(s) -
Zhu Pukun,
Li Zuobang,
Feng Wei,
Wang Qiang,
Wang Lixin
Publication year - 1995
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.1995.070550714
Subject(s) - moiety , polyimide , siloxane , polymer chemistry , thionyl chloride , dimethylsilane , chloride , materials science , pyromellitic dianhydride , hydrosilylation , chemistry , organic chemistry , polymer , catalysis , composite material , layer (electronics)
A photosensitive polysiloxaneimide precursor was synthesized from oxydianiline, bis( p ‐aminophenoxy)dimethylsilane, and a diacid chloride. This diacid chloride was prepared by the reaction of thionyl chloride with a diacid, which resulted from the reaction of pyromellitic dianhydride with hydroxyethylacrylate in N ‐methylpyrrolidone (NMP). The adhesion properties between polyimide and substrates such as SiO 2 wafer were improved with introduction of siloxane moiety into the polyimide chain. The dielectric constant decreased with increasing siloxane moiety content. The photocrosslinking reaction results show that an 88–90% gel fraction was reached under the irradiation of a high‐pressure mercury lamp. © 1995 John Wiley & Sons, Inc.