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Study on organosilicon positive resist. II. Organosilicon positive photoresist (OSPR–1334) and its application to bilayer resist system
Author(s) -
Sugiyama Hisashi,
Mizushima Akiko,
Inoue Takashi,
Nate Kazuo
Publication year - 1992
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.1992.070440910
Subject(s) - resist , organosilicon , photoresist , bilayer , materials science , chemical engineering , layer (electronics) , polymer chemistry , nanotechnology , chemistry , membrane , biochemistry , engineering
A new alkali‐developable organosilicon positive photoresist (OSPR–1334) and a bilayer resist process with OSPR–1334 has been developed. OSPR–1334 is composed of poly( p ‐hydroxybenzylsilsesquioxane) and naphthoquinone diazide. The sensitivity and the resolution are almost the same as those of conventional novolac‐based resists when aqueous tetrakis (2‐hydroxyethyl) ammonium hydroxide is used as a developer. Also, OSPR–1334 has excellent resistance to O 2 RIE. The etching rate is 3.6 nm/min, while that of polyimide resins or hard‐baked novolac‐based resists is 100 nm/min. OSPR–1334 is suitable for use as the top layer of the bilayer resist system. OSPR–1334, after O 2 RIE, can be eliminated by dissolving an unchanged layer followed by spinning out or filtrating a changed surface layer. Submicron patterns with a high aspect ratio can easily be obtained with this bilayer resist process.