Study on organosilicon positive resist. II. Organosilicon positive photoresist (OSPR–1334) and its application to bilayer resist system | Zendy

Sugiyama Hisashi | Zendy; Mizushima Akiko | Zendy; Inoue Takashi | Zendy; Nate Kazuo | Zendy

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Study on organosilicon positive resist. II. Organosilicon positive photoresist (OSPR–1334) and its application to bilayer resist system

Author(s) -

Sugiyama Hisashi,

Mizushima Akiko,

Inoue Takashi,

Nate Kazuo

Publication year - 1992

Publication title -

journal of applied polymer science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.575

H-Index - 166

eISSN - 1097-4628

pISSN - 0021-8995

DOI - 10.1002/app.1992.070440910

Subject(s) - resist , organosilicon , photoresist , bilayer , materials science , chemical engineering , layer (electronics) , polymer chemistry , nanotechnology , chemistry , membrane , biochemistry , engineering

A new alkali‐developable organosilicon positive photoresist (OSPR–1334) and a bilayer resist process with OSPR–1334 has been developed. OSPR–1334 is composed of poly( p ‐hydroxybenzylsilsesquioxane) and naphthoquinone diazide. The sensitivity and the resolution are almost the same as those of conventional novolac‐based resists when aqueous tetrakis (2‐hydroxyethyl) ammonium hydroxide is used as a developer. Also, OSPR–1334 has excellent resistance to O 2 RIE. The etching rate is 3.6 nm/min, while that of polyimide resins or hard‐baked novolac‐based resists is 100 nm/min. OSPR–1334 is suitable for use as the top layer of the bilayer resist system. OSPR–1334, after O 2 RIE, can be eliminated by dissolving an unchanged layer followed by spinning out or filtrating a changed surface layer. Submicron patterns with a high aspect ratio can easily be obtained with this bilayer resist process.

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