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Highly sensitive self‐developing soft X‐ray resists of silicon‐containing aldehyde copolymers and sensitive novolac‐based composite resists containing aldehyde copolymer
Author(s) -
Nate Kazuo,
Inoue Takashi,
Yokono Hitoshi,
Hatada Koichi
Publication year - 1988
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.1988.070350407
Subject(s) - copolymer , resist , aldehyde , trimethylsilyl , polymer chemistry , monomer , materials science , composite number , toluene , silicon , chemistry , organic chemistry , polymer , composite material , catalysis , layer (electronics) , metallurgy
Copolymers of aliphatic aldehydes containing a trimethylsilyl group were prepared at −78°C in toluene using diethylaluminum diphenylamide as an initiator. The copolymer depolymerized into monomeric aldehydes on exposure to soft X‐rays. When the copolymer was used as a soft X‐ray resist, almost complete development was accomplished by exposure alone. No development step was required. The soft X‐ray sensitivity of poly(3‐trimethylsilylpropanal‐co‐propanal) was 50 mJ/cm 2 at the film thickness of 1.0 μm. A composite resist system consisting of a novolac resin and an aldehyde copolymer containing trimethylsilyl groups has also been developed and used as an alkaline‐developable positive electron‐beam and soft X‐ray resist.