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Organosilicon deep UV positive resist consisting of poly( p ‐disilanylenephenylene)
Author(s) -
Nate Kazuo,
Inoue Takashi,
Sugiyama Hisashi,
Ishikawa Mitsuo
Publication year - 1987
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.1987.070340709
Subject(s) - resist , organosilicon , lithography , materials science , etching (microfabrication) , layer (electronics) , photoresist , polymer , plasma etching , phenylene , nanotechnology , optoelectronics , composite material , polymer chemistry
A new class of positive deep ultravoilet (UV) resists consisting of poly( p ‐disilanylenephenylene)s was developed, in which a disilanylene unit and a phenylene unit are connected alternatively in the polymer main chain. These resists had very high etching resistance against oxygen plasma. The lithographic applications of a double‐layer resist system in which the poly( p ‐disilanylenephenylene) film was used as the top imaging layer were examined. As a result, very high resolution and high contrast were attained. The double‐layer resist technique using organosilicon deep UV positive resist appears very promising for lithographic applications.