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The importance of organosilane polymer photo‐oxidation in resist pattern fabrication
Author(s) -
Ban Hiroshi,
Sukegawa Ken
Publication year - 1987
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.1987.070330813
Subject(s) - resist , siloxane , polymer , materials science , fabrication , hildebrand solubility parameter , chemical engineering , solubility , polymer chemistry , nanotechnology , composite material , chemistry , organic chemistry , medicine , alternative medicine , layer (electronics) , pathology , engineering
Abstract The siloxane structure formed in photo‐oxidized poly(methylphenylsilane) and poly(methylpropylsilane) is evaluated to clarify its effect on resist sensitivity. It is produced by 17–35 mol% where exposure energy corresponds to the resist sensitivity. This structure change enhances polymer solubility with the developer. Photo‐oxidation reaction is found to be an important factor for fabricating organosilane polymer resist patterns.