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Relationship between electron sensitivity and chemical structure of polymers as EB resists. I. Electron sensitivity of various polyamides
Author(s) -
Ogata Naoya,
Sanui Kohei,
Azuma Chiaki,
Tanaka Hozumi,
Oguchi Kiyoshi,
Nakada Tomihiro,
Takahashi Yoichi
Publication year - 1983
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.1983.070280224
Subject(s) - polyamide , resist , double bond , materials science , polymer , epoxy , polymer chemistry , solubility , cathode ray , electron , chemistry , composite material , organic chemistry , physics , layer (electronics) , quantum mechanics
Polyamides containing double bonds or epoxy groups were synthesized and evaluated as electron beam (EB) resists, in order to find the relationship between electron beam sensitivity and chemical structure of the polyamides. It was found that polyamides containing double bonds, which have good solubility, are easily crosslinked by the electron beam exposure. The sensitivity of a polyamide with 70 mol% of the repeat units containing double bonds was equivalent to that of a 100% unsaturated polyamide which contained double bonds of 100% molar ratios, and thus it is not necessary that the polyamide be a homopolymer of unsaturated repeating units. The polyamides have good physical properties, and are adaptable to dry etching processes.