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Design and synthesis of new photoresist materials for ArF lithography
Author(s) -
Seo HwangUn,
Jin SungHo,
Choi SangJun,
Gal YeongSoon,
Lim Kwon Taek
Publication year - 2004
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/app.13701
Subject(s) - photoresist , materials science , polymer chemistry , copolymer , polymer , acrylate , resist , maleic anhydride , lithography , vinyl ether , chemical engineering , etching (microfabrication) , polymerization , layer (electronics) , nanotechnology , composite material , optoelectronics , engineering
A new class of photoresist matrix polymers based on vinyl ether–maleic anhydride (VEMA) alternating copolymers was developed for ArF single‐layer lithography. These polymers were synthesized by copolymerization of alkyl vinyl ether and maleic anhydride alternating copolymers with acrylate derivatives containing bulky alicyclic acid‐labile protecting groups. The resulting polymers showed good control of polymerization and high transmittance. Also, these resists exhibited good adhesion to the substrate, high dry‐etching resistance against CF 4 mixture gas (1.02 times the etching rate of deep UV resist), and high selectivity to silicon oxide etching. Using an ArF excimer laser exposure system with 0.6 NA, 120‐nm L/S patterns were resolved under conventional illumination. © 2004 Wiley Periodicals, Inc. J Appl Polym Sci 92: 165–170, 2004