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IR laser‐induced synthesis of nanostructured gemanium telluride in the gas phase
Author(s) -
Pola Josef,
Pokorná Dana,
Diánez María Jesús,
Sayagués María Jesús,
Bastl Zdeněk,
Vorlíček Vladimír
Publication year - 2005
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/aoc.916
Subject(s) - chemistry , telluride , germanium , raman spectroscopy , tellurium , x ray photoelectron spectroscopy , amorphous solid , chemical vapor deposition , decomposition , phase (matter) , laser , analytical chemistry (journal) , crystallography , chemical engineering , inorganic chemistry , silicon , organic chemistry , optics , physics , engineering
The gas‐phase synthesis and chemical vapour deposition of nanostructured germanium telluride has been achieved for the first time. The pulsed IR laser irradiation of gaseous CH 3 ) 4 Ge(CH 3 ) 2 TeSF 6 mixtures results in homogeneous decomposition of both organometallics and formation of GeTe x ( x = 1, 2). The amorphous GeTe 2 and crystalline GeTe were identified by Raman and X‐ray photoelectron spectroscopy and by electron diffraction. Their formation is explained by an intermediacy of germanium and tellurium clusters and by reaction between these clusters in a hot laser‐induced zone. Copyright © 2005 John Wiley & Sons, Ltd.