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How gallium arsenide wafers are made
Author(s) -
Kitsunai Minoru,
Yuki Takayoshi
Publication year - 1994
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/aoc.590080303
Subject(s) - gallium arsenide , epitaxy , wafer , chemical vapor deposition , chemistry , gallium , optoelectronics , deposition (geology) , materials science , organic chemistry , paleontology , layer (electronics) , sediment , biology
Abstract Ten Japanese gallium arsenide wafer manufacturers voluntarily formed The Japan Manufacturers' Society of Compound Semiconductor Materials (JAMS‐CS) in 1983. This report summarizes the theories, the systems, and the operations of gallium arsenide production: the gradient freeze (GF) method, the liquidencapsulated Czochralski (LEC) method, the wafer processing, the vapor‐phase epitaxial (VPE) growth method, the liquid‐phase epitaxial (LPE) growth method, the metalorganic chemical vapor deposition (MO‐CVD) method and the molecular beam epitaxial (MBE) method.