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A kinetic model for the growth of znte by metal organic chemical vapour deposition
Author(s) -
Dumont Hervé,
Qu'hen Bruno,
Bourée Jean Eric,
Gorochov Ouri,
Marbeuf Alain
Publication year - 1994
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/aoc.590080202
Subject(s) - diethylzinc , chemistry , metalorganic vapour phase epitaxy , growth rate , chemical vapor deposition , adsorption , partial pressure , metal , kinetic energy , deposition (geology) , group 2 organometallic chemistry , epitaxy , organic chemistry , molecule , layer (electronics) , oxygen , catalysis , paleontology , physics , geometry , mathematics , quantum mechanics , sediment , biology , enantioselective synthesis
A kinetic model for the metal organic chemical vapour deposition (MOCVD) growth of ZnTe is presented, taking into account the competitive adsorption of organometallic precursors. By assuming that diethylzinc (DEZn) and diethyltellurium (DETe) or di‐isopropyltellurium (DIpTe) are adsorbed onto the surface by two sites, the model yields the growth rate as a function of the gas‐phase concentrations of the constitutents and is corroborated by experimental results obtained by the MOCVD growth (at 400°C with DETe or 350°C with DIpTe), which shows asymmetric behaviour: for a given DETe or DIpTe pressure (10 −4 atm), the growth rate as a function of DEZn partial pressure passes through a maximum, whereas, at the same constant DEZn pressure, the growth rate increases monotonically when the DETe or DIpTe partial pressure increases