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The epitaxial growth of AlGaAs using highly purified trimethylaluminum
Author(s) -
Maeda T,
Hata M,
Isemura M,
Yako T
Publication year - 1991
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/aoc.590050416
Subject(s) - chemistry , methoxide , trihalide , impurity , halide , aluminium , halogen , arsine , group 2 organometallic chemistry , silicon , epitaxy , wafer , inorganic chemistry , layer (electronics) , methanol , organic chemistry , catalysis , molecule , nanotechnology , alkyl , materials science , phosphine
Highly purified trimethylaluminum [(CH 3 ) 3 Al] was prepared by reducing the contamination of volatile impurities such as organic silicon and dimethyl‐aluminum methoxide [(CH 3 ) 2 AlOCH 3 ]. The concentration of methoxy group in (CH 3 ) 3 Al was found to decrease considerably when (CH 3 ) 2 Al was distilled in the presence of aluminum trihalide. Among the halides, purification efficiency increased in the order I>Br>Cl. High‐quality AlGaAs layer and AlGaAs/GaAs modulation doped structures were grown by organometallic vapor‐phase epiloxy (OMVPE) using the purified (CH 3 ) 3 Al. Their electrical properties were discussed in relation to the volatile impurity in the source gas.