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XPS study on early stages of heat deterioratin of silicon‐containing aromatic polymide film
Author(s) -
Sugitani H,
Kikuchi T,
Sugimoto Y,
Saitou T
Publication year - 1991
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/aoc.590050415
Subject(s) - silicon , disiloxane , thermal decomposition , chemistry , polyimide , methylene , carbon fibers , decomposition , x ray photoelectron spectroscopy , polymer chemistry , chemical engineering , organic chemistry , materials science , catalysis , composite material , layer (electronics) , composite number , engineering
Early stages of heat deterioration of some siliconcontaining aromatic polyimide thin films with disiloxane groups (I) in their main chains were studied with XPS. It was found that the thermal decomposition of silicon‐containing aromatic polyimides takes place at lower temperatures than those not modified with silicon. The low thermal stabilities observed are explained by the easier decomposition of silicon–carbon bonds (e.g. silicon–methylene, silicon–aryl) than other bonds (e.g. carbon–carbon, carbon–oxygen). Particularly, silicon–methylene bonds (II) readily undergo thermal oxidative decomposition and start to decompose at 350°C under aerobic conditions. This starting temperature of thermal decomposition is lower by 100°C than that of the corresponding polyimide not modified with silicon. In the case of polyimide incorporating silicon–aryl bonds (III) instead of silicon–methylene bonds, the decrease in the thermal decomposition temperature is as small as 50°C, and decomposition under aerobic conditions starts at 400°C.