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Synchrotron radiation‐stimulated photochemical reaction and its application to semiconductor processes
Author(s) -
Urisu Tsuneo,
Takahashi JunIchi,
Utsumi Yuichi,
Akazawa Housei
Publication year - 1991
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/aoc.590050405
Subject(s) - chemistry , silicon , irradiation , epitaxy , chemical vapor deposition , synchrotron radiation , isotropic etching , semiconductor , chemical reaction , valence (chemistry) , photochemistry , etching (microfabrication) , analytical chemistry (journal) , layer (electronics) , optoelectronics , optics , materials science , biochemistry , physics , organic chemistry , chromatography , nuclear physics
Recent results are reviewed on synchrotron radiation (SR)‐excited photochemical reaction studies aimed at applications to semiconductor processes. Valence or core electronic excitations induced by SR irradiation and ensuing chemical reactions are classified and characterized by rate equations. Unique material selectivity in etching has been found. SiO 2 has been found to evaporate by SR irradiation and this phenomenon can be applied to the low‐temperature surface cleaning of silicon. In the epitaxial growth of Silicon by ultrahighvacuum chemical vapor deposition using Si 2 H 6 , SR irradiation significantly lowers growth temperature beyond the low‐temperature limit of thermal reaction. Lowering of the operating temperature by SR irradiation is especially effective in applications to the atomic layer epitaxial growth of silicon. The layer‐by‐layer process has been successfully demonstrated, confirming self‐limiting adsorption of SiH 2 Cl 2 and ensuring surface reactivation by SR irradiation.