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The epitaxial growth of gallium arsenide using triethylarsine
Author(s) -
Maeda T,
Hata M,
Zempo Y,
Fukuhara N,
Matsuda Y,
Sawara K
Publication year - 1989
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/aoc.590030206
Subject(s) - arsine , chemistry , gallium arsenide , epitaxy , thermal decomposition , gallium , decomposition , impurity , ammonia , carbon fibers , layer (electronics) , chemical engineering , optoelectronics , catalysis , composite number , organic chemistry , composite material , materials science , phosphine , engineering
The thermal decomposition of triethylarsine (TEAs) has been studied. It decomposes at a lower temperature than arsine (AsH 3 ). The decomposition proceeds via a radical process at a temperature above 700°C. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good morphology was obtained, but the layer was found to contain a considerable amount of carbon impurity originating from TEAs. The use of TEAs with 10% AsH 3 or with 20% ammonia (NH 3 ) apparently improves the quality of GaAs layer. A possible scheme for reducing carbon incorporation is discussed.