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Flashlamp pumping of erbium‐doped silicon nanoclusters
Author(s) -
Kenyon A. J.,
Chryssou C. E.,
Pitt C. W.,
Iwayama T. S.,
Hole D. E.
Publication year - 2001
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/aoc.154
Subject(s) - nanoclusters , erbium , photoluminescence , chemistry , silicon , doping , ion , excitation , chemical vapor deposition , optoelectronics , ion implantation , thin film , rare earth , photochemistry , nanotechnology , mineralogy , materials science , organic chemistry , electrical engineering , engineering
We report recent results showing broad‐band excitation of erbium ions implanted into thin films of silica containing silicon nanoclusters. Indirect excitation of the rare‐earth ions is mediated by the nanoclusters, which are either grown in during plasma‐enhanced chemical vapour deposition of the films, or are formed by implantation of thermally grown SiO 2 layers with Si + ions. We demonstrate efficient flashlamp pumping of the erbium 1535 µm photoluminescence band and discuss the device implications of this material. Copyright © 2001 John Wiley & Sons, Ltd.