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Blue/green light‐emitting diode based on diethyl[ N ‐arylmethylenethiobenzahydrazonato]gallium complexes
Author(s) -
Shen Yingzhong,
Huang Xiaoyan,
Xu Sen,
Deng Jie,
Zhang Yiying
Publication year - 2007
Publication title -
applied organometallic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.53
H-Index - 71
eISSN - 1099-0739
pISSN - 0268-2605
DOI - 10.1002/aoc.1147
Subject(s) - electroluminescence , chemistry , triethylgallium , gallium , green light , photoluminescence , diode , spin coating , light emitting diode , doping , analytical chemistry (journal) , mass spectrum , nuclear chemistry , photochemistry , mass spectrometry , coating , organic chemistry , optoelectronics , blue light , layer (electronics) , materials science , epitaxy , metalorganic vapour phase epitaxy , chromatography
Three diethylgallium complexes of type Et 2 GaL [L = N ‐(4‐methoxy) benzylidenethiobenzahydrazonato ( 1 ), N ‐(4‐ N , N ‐dimethylamino)benzy lidenethiobenzahydrazonato ( 2 ) and N ‐(9‐anthryl)methylenethio benzahydrazonato ( 3 )] were synthesized by the reaction of triethylgallium with appropriate N ‐arylmethylenethiobenzahydrazones. The compounds obtained were characterized by elemental analysis, 1 H NMR, IR and mass spectroscopy, respectively. Monolayer light‐emitting diodes based on the diethyl[ N ‐arylmethylenethio benzahydrazonato]gallium doped poly(vinylcarbazole) were fabricated using a spin coating method. The photoluminescent and electroluminescent emission spectra of 1 and 3 were measured (429 and 479 nm for 1 and 3 , respectively). The electroluminescent properties of 1 and 3 were also studied. The electroluminscence bands are located in the blue/green region (465 and 510 nm for complexes 1 and 3 , respectively). Copyright © 2006 John Wiley & Sons, Ltd.
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