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Isomeric Dibenzoheptazethrenes for Air‐Stable Organic Field‐Effect Transistors
Author(s) -
Zong Chaoyang,
Zhu Xiaoting,
Xu Zhanqiang,
Zhang Lifeng,
Xu Jun,
Guo Jing,
Xiang Qin,
Zeng Zebing,
Hu Wenping,
Wu Jishan,
Li Rongjin,
Sun Zhe
Publication year - 2021
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.202105872
Subject(s) - diradical , organic semiconductor , semiconductor , materials science , singlet state , transistor , organic field effect transistor , field effect transistor , electron paramagnetic resonance , optoelectronics , chemistry , photochemistry , atomic physics , nuclear magnetic resonance , electrical engineering , physics , voltage , excited state , engineering
Singlet diradicaloids hold great potential as semiconductors for organic field‐effect transistors (OFETs). However, their relative low material and device stabilities impede the practical applications. Here, to achieve balanced stability and performance, two isomeric dibenzoheptazethrene derivatives with singlet diradical character were synthesized in a concise manner. Benefitting from the aromatic stabilization, both compounds display a small diradical character and large singlet–triplet gap, as corroborated by variable‐temperature electron paramagnetic resonance spectra, single‐crystal analysis, and theoretical calculations. OFET devices based on single crystals showed a high hole mobility of 0.15 cm 2 V −1 s −1 , which is the highest for zethrene‐based semiconductors. Both isomers exhibited remarkable material stability in air‐saturated solutions as well as excellent bias‐stress and storage stability in device under ambient air.