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In Situ Ligand Bonding Management of CsPbI 3 Perovskite Quantum Dots Enables High‐Performance Photovoltaics and Red Light‐Emitting Diodes
Author(s) -
Shi Junwei,
Li Fangchao,
Jin Yan,
Liu Cheng,
CohenKleinstein Ben,
Yuan Shuai,
Li Youyong,
Wang ZhaoKui,
Yuan Jianyu,
Ma Wanli
Publication year - 2020
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.202010440
Subject(s) - quantum dot , perovskite (structure) , passivation , photovoltaics , light emitting diode , materials science , optoelectronics , photoluminescence , diode , ligand (biochemistry) , bifunctional , quantum efficiency , nanotechnology , chemistry , photovoltaic system , crystallography , catalysis , layer (electronics) , receptor , ecology , biochemistry , biology
To fine‐tune surface ligands towards high‐performance devices, we developed an in situ passivation process for all‐inorganic cesium lead iodide (CsPbI 3 ) perovskite quantum dots (QDs) by using a bifunctional ligand, L‐phenylalanine (L‐PHE). Through the addition of this ligand into the precursor solution during synthesis, the in situ treated CsPbI 3 QDs display significantly reduced surface states, increased vacancy formation energy, higher photoluminescence quantum yields, and much improved stability. Consequently, the L‐PHE passivated CsPbI 3 QDs enabled the realization of QD solar cells with an optimal efficiency of 14.62 % and red light‐emitting diodes (LEDs) with a highest external quantum efficiency (EQE) of 10.21 %, respectively, demonstrating the great potential of ligand bonding management in improving the optoelectronic properties of solution‐processed perovskite QDs.