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Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
Author(s) -
Zhang Haojie,
Hagen Dirk J.,
Li Xiaopeng,
Graff Andreas,
Heyroth Frank,
Fuhrmann Bodo,
Kostanovskiy Ilya,
Schweizer Stefan L.,
Caddeo Francesco,
Maijenburg A. Wouter,
Parkin Stuart,
Wehrspohn Ralf B.
Publication year - 2020
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.202002280
Subject(s) - atomic layer deposition , phosphide , conformal coating , deposition (geology) , layer (electronics) , cobalt , materials science , chemical engineering , coating , transition metal , chemical vapor deposition , phosphorus , electrochemistry , black phosphorus , nanotechnology , metal , inorganic chemistry , chemistry , optoelectronics , catalysis , metallurgy , electrode , organic chemistry , engineering , paleontology , sediment , biology
Transition‐metal phosphides (TMP) prepared by atomic layer deposition (ALD) are reported for the first time. Ultrathin Co‐P films were deposited by using PH 3 plasma as the phosphorus source and an extra H 2 plasma step to remove excess P in the growing films. The optimized ALD process proceeded by self‐limited layer‐by‐layer growth, and the deposited Co‐P films were highly pure and smooth. The Co‐P films deposited via ALD exhibited better electrochemical and photoelectrochemical hydrogen evolution reaction (HER) activities than similar Co‐P films prepared by the traditional post‐phosphorization method. Moreover, the deposition of ultrathin Co‐P films on periodic trenches was demonstrated, which highlights the broad and promising potential application of this ALD process for a conformal coating of TMP films on complex three‐dimensional (3D) architectures.