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Hole and Electron Doping of the 4d Transition‐Metal Oxyhydride LaSr 3 NiRuO 4 H 4
Author(s) -
Jin Lun,
Hayward Michael A.
Publication year - 2020
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201913951
Subject(s) - doping , cuprate , transition metal , crystallography , superconductivity , materials science , metal , electron deficiency , transition temperature , ion , inorganic chemistry , chemistry , condensed matter physics , physics , catalysis , metallurgy , biochemistry , organic chemistry , optoelectronics
Hole or electron doping of phases prepared by topochemical reactions (e.g. anion deintercalation or anion‐exchange) is extremely challenging as these low‐temperature conversion reactions are typically very sensitive to the electron counts of precursor phases. Herein we report the successful hole and electron doping of the transition‐metal oxyhydride LaSr 3 NiRuO 4 H 4 by first preparing precursors in the range La x Sr 4− x NiRuO 8 0.5< x <1.4 and then converting into the corresponding La x Sr 4− x NiRuO 4 H 4 phases. This is particularly noteworthy as the (Ni/Ru)H 2 sheets in the La x Sr 4− x NiRuO 4 H 4 phases are structurally analogous to the CuO 2 sheets in cuprate superconductors and hole doping (Ni 1+/2+ , Ru 2+ ) or electron doping (Ni 2+ , Ru 1+/2+ ) yields materials with partial occupancy in Ni/Ru3 d / 4 dx 2 - y 2–H 1s bands which are analogous to the partially occupied Cu3 dx 2 - y 2–O 2p bands present in the CuO 2 sheets of doped superconducting cuprates.