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On‐surface Synthesis of a Semiconducting 2D Metal–Organic Framework Cu 3 (C 6 O 6 ) Exhibiting Dispersive Electronic Bands
Author(s) -
Zhang Ran,
Liu Jing,
Gao Yifan,
Hua Muqing,
Xia Bowen,
Knecht Peter,
Papageorgiou Anthoula C.,
Reichert Joachim,
Barth Johannes V.,
Xu Hu,
Huang Li,
Lin Nian
Publication year - 2020
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201913698
Subject(s) - scanning tunneling microscope , x ray photoelectron spectroscopy , delocalized electron , band gap , density functional theory , materials science , semiconductor , molecule , spectroscopy , scanning tunneling spectroscopy , adsorption , electronic band structure , crystallography , electronic structure , metal , substrate (aquarium) , chemistry , computational chemistry , nanotechnology , condensed matter physics , optoelectronics , physics , quantum mechanics , organic chemistry , oceanography , geology , metallurgy , nuclear magnetic resonance
A 2D metal–organic framework (2D‐MOF) was formed on a Cu(111) substrate using benzenehexol molecules. By means of a combination of scanning tunneling microscopy and spectroscopy, X‐ray photoelectron spectroscopy and density‐functional theory, the structure of the 2D‐MOF is determined to be Cu 3 (C 6 O 6 ), which is stabilized by O–Cu–O bonding motifs. We find that upon adsorption on Cu(111), the 2D‐MOF features a semiconductor band structure with a direct band gap of 1.5 eV. The O–Cu–O bonds offer efficient charge delocalization, which gives rise to a highly dispersive conduction band with an effective mass of 0.45 m e at the band bottom, implying a high electron mobility in this material.