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High Compression‐Induced Conductivity in a Layered Cu–Br Perovskite
Author(s) -
Jaffe Adam,
Mack Stephanie A.,
Lin Yu,
Mao Wendy L.,
Neaton Jeffrey B.,
Karunadasa Hemamala I.
Publication year - 2020
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201912575
Subject(s) - perovskite (structure) , halide , conductivity , valence (chemistry) , band gap , density functional theory , chemistry , electronic structure , materials science , electronic band structure , atomic orbital , analytical chemistry (journal) , crystallography , inorganic chemistry , condensed matter physics , computational chemistry , optoelectronics , electron , physics , organic chemistry , chromatography , quantum mechanics
We show that the onset pressure for appreciable conductivity in layered copper‐halide perovskites can decrease by ca. 50 GPa upon replacement of Cl with Br. Layered Cu–Cl perovskites require pressures >50 GPa to show a conductivity of 10 −4 S cm −1 , whereas here a Cu–Br congener, (EA) 2 CuBr 4 (EA=ethylammonium), exhibits conductivity as high as 2×10 −3 S cm −1 at only 2.6 GPa, and 0.17 S cm −1 at 59 GPa. Substitution of higher‐energy Br 4p for Cl 3p orbitals lowers the charge‐transfer band gap of the perovskite by 0.9 eV. This 1.7 eV band gap decreases to 0.3 eV at 65 GPa. High‐pressure X‐ray diffraction, optical absorption, and transport measurements, and density functional theory calculations allow us to track compression‐induced structural and electronic changes. The notable enhancement of the Br perovskite's electronic response to pressure may be attributed to more diffuse Br valence orbitals relative to Cl orbitals. This work brings the compression‐induced conductivity of Cu‐halide perovskites to more technologically accessible pressures.