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High Electron Mobility of Amorphous Red Phosphorus Thin Films
Author(s) -
Amaral Pedro E. M.,
Nieman Glen P.,
Schwenk Gregory R.,
Jing Hao,
Zhang Raymond,
Cerkez Elizabeth B.,
Strongin Daniel,
Ji HaiFeng
Publication year - 2019
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201902534
Subject(s) - amorphous solid , electron mobility , materials science , doping , phosphorus , black phosphorus , thin film transistor , yield (engineering) , thermal stability , thin film , evaporation , chemical engineering , nanotechnology , optoelectronics , metallurgy , chemistry , layer (electronics) , crystallography , physics , engineering , thermodynamics
Black phosphorus (BP) has been gathering great attention for its electronic and optoelectronic applications due to its high electron mobility and high I ON/OFF current switching ratio. The limitations of this material include its low synthetic yield and high cost. One alternative to BP is another type of phosphorus allotrope, red phosphorus (RP), which is much more affordable and easier to process. Although RP has been widely used in industry for hundreds of years and considered as an insulating material, in this study, we demonstrate through field‐effect transistors (FET) measurements that amorphous red phosphorus (a‐RP) films are semiconductive with a high mobility of 387 cm 2 V −1 s −1 and a current switching ratio of ≈10 3 , which is comparable to the electronic characteristics previously reported for BP. The films were produced via a thermal evaporation method or a facile drop‐casting approach onto Si/SiO 2 substrates. We also report a study of the oxidation process of the films over time and a method to stabilize the films via doping a‐RP with metal oxides. The doped films retain stability for one thousand I–V cycles, with no signs of degradation.