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Broadband Cr 3+ , Sn 4+ ‐Doped Oxide Nanophosphors for Infrared Mini Light‐Emitting Diodes
Author(s) -
Huang WenTse,
Cheng ChiaoLing,
Bao Zhen,
Yang ChiaWei,
Lu KuangMao,
Kang ChiehYu,
Lin ChihMin,
Liu RuShi
Publication year - 2019
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201813340
Subject(s) - materials science , phosphor , doping , diode , light emitting diode , optoelectronics , infrared , full width at half maximum , optics , physics
Light‐emitting diodes break barriers of size and performance for displays. With devices becoming smaller, the materials also need to get smaller. Chromium(III)‐doped oxide phosphors, which emit near‐infrared (NIR) light, have recently been used in small electronic devices. In this work, mesoporous silica nanoparticles were used as nanocarriers. The nanophosphor ZnGa 2 O 4 :Cr 3+ ,Sn 4+ formed in the mesopore after sintering. Good dispersity and morphology were performed with average diameters of 71±7 nm. It emitted light at 600–850 nm; the intensity was optimized by tuning the doping ratio of Cr 3+ and Sn 4+ . Meanwhile, the light conversion efficiency increased from 7.8 % to 37 % and the molar concentration increased from 0.125 m to 0.5 m . The higher radiant flux of 3.3 mW was obtained by operating an input current of 45 mA. However, the NIR nanophosphor showed good performance on mini light‐emitting diode chips.