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Atomically Precise Expansion of Unsaturated Silicon Clusters
Author(s) -
Leszczyńska Kinga I.,
Huch Volker,
Präsang Carsten,
Schwabedissen Jan,
Berger Raphael J. F.,
Scheschkewitz David
Publication year - 2019
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201811331
Subject(s) - silicon , electrophile , cluster (spacecraft) , cluster expansion , lithium (medication) , naphthalene , catalysis , ligand (biochemistry) , chemical vapor deposition , chemical physics , chemistry , materials science , nanotechnology , chemical engineering , organic chemistry , physics , computer science , thermodynamics , medicine , biochemistry , receptor , engineering , programming language , endocrinology
Small‐ to medium‐sized clusters occur in various areas of chemistry, for example, as active species of heterogeneous catalysis or as transient intermediates during chemical vapor deposition. The manipulation of stable representatives is mostly limited to the stabilizing ligand periphery, virtually excluding the systematic variation of the property‐determining cluster scaffold. We now report the deliberate expansion of a stable unsaturated silicon cluster from six to seven and finally eight vertices. The consecutive application of lithium/naphthalene as the reducing agent and decamethylsilicocene as the electrophilic source of silicon results in the expansion of the core by precisely one atom with the potential of infinite repetition.