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Transfer‐Free, Large‐Scale Growth of High‐Quality Graphene on Insulating Substrate by Physical Contact of Copper Foil
Author(s) -
Song Intek,
Park Yohwan,
Cho Hyeyeon,
Choi Hee Cheul
Publication year - 2018
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201805923
Subject(s) - materials science , foil method , chemical vapor deposition , quartz , substrate (aquarium) , graphene , layer (electronics) , copper , chemical engineering , alloy , composite material , nanotechnology , metallurgy , oceanography , engineering , geology
High‐quality, large‐area, single‐layer graphene was directly grown on top of a quartz substrate by a low‐pressure chemical vapor deposition (CVD) process using Cu vapor as a catalyst. In this process, continuous generation and supply of highly concentrated Cu vapor is the key to the growth of large‐scale, high‐quality graphene. It was achieved by direct physical contact, or “touch‐down,” of a Cu foil with an underlying sacrificial SiO 2 /Si substrate, and the target quartz substrate was placed on top of the Cu foil, eventually having a quartz/Cu/SiO 2 /Si sandwich structure. To establish the reaction mechanism, a test growth was performed without the quartz substrate, which revealed that Cu is diffused through the SiO 2 layer of the sacrificial SiO 2 /Si substrate to form liquid‐phase Cu‐Si alloy that emits massive Cu vapor. This Cu vapor catalyzes thermal decomposition of supplied CH 4 gas.