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Selective Etching of Silicon from Ti 3 SiC 2 (MAX) To Obtain 2D Titanium Carbide (MXene)
Author(s) -
Alhabeb Mohamed,
Maleski Kathleen,
Mathis Tyler S.,
Sarycheva Asia,
Hatter Christine B.,
Uzun Simge,
Levitt Ariana,
Gogotsi Yury
Publication year - 2018
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201802232
Subject(s) - mxenes , materials science , silicon carbide , etching (microfabrication) , titanium , silicon , titanium carbide , carbide , phase (matter) , aluminium , chemical engineering , nanotechnology , composite material , metallurgy , layer (electronics) , chemistry , organic chemistry , engineering
Abstract Until now, MXenes could only be produced from MAX phases containing aluminum, such as Ti 3 AlC 2 . Here, we report on the synthesis of Ti 3 C 2 (MXene) through selective etching of silicon from titanium silicon carbide—the most common MAX phase. Liters of colloidal solutions of delaminated Ti 3 SiC 2 ‐derived MXene (0.5–1.3 mg mL −1 ) were produced and processed into flexible and electrically conductive films, which show higher oxidation resistance than MXene synthesized from Ti 3 AlC 2 . This new synthesis method greatly widens the range of precursors for MXene synthesis.