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High‐Pressure Band‐Gap Engineering in Lead‐Free Cs 2 AgBiBr 6 Double Perovskite
Author(s) -
Li Qian,
Wang Yonggang,
Pan Weicheng,
Yang Wenge,
Zou Bo,
Tang Jiang,
Quan Zewei
Publication year - 2017
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201708684
Subject(s) - perovskite (structure) , halide , band gap , materials science , optoelectronics , lead (geology) , photovoltaic system , high pressure , engineering physics , nanotechnology , chemistry , electrical engineering , inorganic chemistry , physics , crystallography , engineering , geology , geomorphology
Novel inorganic lead‐free double perovskites with improved stability are regarded as alternatives to state‐of‐art hybrid lead halide perovskites in photovoltaic devices. The recently discovered Cs 2 AgBiBr 6 double perovskite exhibits attractive optical and electronic features, making it promising for various optoelectronic applications. However, its practical performance is hampered by the large band gap. In this work, remarkable band gap narrowing of Cs 2 AgBiBr 6 is, for the first time, achieved on inorganic photovoltaic double perovskites through high pressure treatments. Moreover, the narrowed band gap is partially retainable after releasing pressure, promoting its optoelectronic applications. This work not only provides novel insights into the structure–property relationship in lead‐free double perovskites, but also offers new strategies for further development of advanced perovskite devices.