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High Thermoelectric Performance of New Rhombohedral Phase of GeSe stabilized through Alloying with AgSbSe 2
Author(s) -
Huang Zhiwei,
Miller Samuel A.,
Ge Binghui,
Yan Mingtao,
Anand Shashwat,
Wu Tianmin,
Nan Pengfei,
Zhu Yuanhu,
Zhuang Wei,
Snyder G. Jeffrey,
Jiang Peng,
Bao Xinhe
Publication year - 2017
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201708134
Subject(s) - thermoelectric effect , materials science , orthorhombic crystal system , thermoelectric materials , semiconductor , trigonal crystal system , condensed matter physics , doping , crystal structure , crystallography , optoelectronics , thermodynamics , chemistry , physics
Abstract GeSe is a IV–VI semiconductor, like the excellent thermoelectric materials PbTe and SnSe. Orthorhombic GeSe has been predicted theoretically to have good thermoelectric performance but is difficult to dope experimentally. Like PbTe, rhombohedral GeTe has a multivalley band structure, which is ideal for thermoelectrics and also promotes the formation of Ge vacancies to provide enough carriers for electrical transport. Herein, we investigate the thermoelectric properties of GeSe alloyed with AgSbSe 2 , which stabilizes a new rhombohedral structure with higher symmetry that leads to a multivalley Fermi surface and a dramatic increase in carrier concentration. The zT of GeAg 0.2 Sb 0.2 Se 1.4 reaches 0.86 at 710 K, which is 18 times higher than that of pristine GeSe and over four times higher than doped orthorhombic GeSe. Our results open a new avenue towards developing novel thermoelectric materials through crystal phase engineering using a strategy of entropy stabilization of high‐symmetry alloys.