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Branched Hydrosilane Oligomers as Ideal Precursors for Liquid‐Based Silicon‐Film Deposition
Author(s) -
Haas Michael,
Christopoulos Viktor,
Radebner Judith,
Holthausen Michael,
Lainer Thomas,
Schuh Lukas,
Fitzek Harald,
Kothleitner Gerald,
Torvisco Ana,
Fischer Roland,
Wunnicke Odo,
Stueger Harald
Publication year - 2017
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201707525
Subject(s) - silicon , raman spectroscopy , materials science , ellipsometry , deposition (geology) , thin film , amorphous solid , absorption (acoustics) , amorphous silicon , phase (matter) , conductivity , analytical chemistry (journal) , chemical engineering , chemistry , nanotechnology , crystallography , crystalline silicon , optoelectronics , optics , organic chemistry , composite material , paleontology , physics , engineering , sediment , biology
Herein a convenient synthetic method to obtain 2,2,3,3‐tetrasilyltetrasilane 3 and 2,2,3,3,4,4‐hexasilylpentasilane 4 on a multigram scale is presented. Proton‐coupled 29 Si NMR spectroscopy and single‐crystal X‐ray crystallography enabled unequivocal structural assignment. Owing to their unique properties, which are reflected in their nonpyrophoric character on contact with air and their enhanced light absorption above 250 nm, 3 and 4 are valuable precursors for liquid‐phase deposition (LPD) and the processing of thin silicon films. Amorphous silicon (a‐Si:H) films of excellent quality were deposited starting from 3 and characterized by conductivity measurements, ellipsometry, optical microscopy, and Raman spectroscopy.