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Inside Back Cover: Unexpected Ge–Ge Contacts in the Two‐Dimensional Ge 4 Se 3 Te Phase and Analysis of Their Chemical Cause with the Density of Energy (DOE) Function (Angew. Chem. Int. Ed. 34/2017)
Author(s) -
Küpers Michael,
Konze Philipp M.,
Maintz Stefan,
Steinberg Simon,
Mio Antonio M.,
CojocaruMirédin Oana,
Zhu Min,
Müller Merlin,
Luysberg Martina,
Mayer Joachim,
Wuttig Matthias,
Dronskowski Richard
Publication year - 2017
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.201706616
Subject(s) - germanium , chemical vapor deposition , chemical bond , materials science , germanium compounds , chemical physics , crystallography , nanotechnology , chemistry , silicon , optoelectronics , organic chemistry
Unexpected Ge–Ge interactions were found in “two‐dimensional” Ge 4 Se 3 Te as reported by R. Dronskowski et al. in their Communication on page 10204 ff. The layered material was crystallized using chemical vapor deposition and then characterized for the first time. Its electronic structure and the chemical cause of the Ge–Ge interactions were examined by chemical bonding analysis and the newly introduced density of energy (DOE) function.