Size‐ and Interface‐Modulated Metal–Insulator Transition in Solution‐Synthesized Nanoscale VO 2 ‐TiO 2 ‐VO 2  Heterostructures | Zendy

Li Xuefei | Zendy; Schaak Raymond E. | Zendy

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Size‐ and Interface‐Modulated Metal–Insulator Transition in Solution‐Synthesized Nanoscale VO 2 ‐TiO 2 ‐VO 2 Heterostructures

Author(s) -

Li Xuefei,

Schaak Raymond E.

Publication year - 2017

Publication title -

angewandte chemie international edition

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 5.831

H-Index - 550

eISSN - 1521-3773

pISSN - 1433-7851

DOI - 10.1002/anie.201706599

Subject(s) - nanorod , heterojunction , materials science , rutile , nanoscopic scale , metal–insulator transition , nanostructure , epitaxy , metal , insulator (electricity) , nanotechnology , vanadium dioxide , transition metal , chemical engineering , optoelectronics , thin film , metallurgy , chemistry , catalysis , biochemistry , layer (electronics) , engineering

The M1 form of vanadium dioxide, which exhibits a reversible insulator–metal transition above room temperature, has been incorporated into nanoscale heterostructures through solution‐phase epitaxial growth on the tips of rutile TiO 2 nanorods. Four distinct classes of VO 2 ‐TiO 2 ‐VO 2 nanorod heterostructures are accessible by modulating the growth conditions. Each type of VO 2 ‐TiO 2 ‐VO 2 nanostructure has a different insulator–metal transition temperature that depends on the VO 2 domain sizes and the TiO 2 ‐VO 2 interfacial strain characteristics.

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